Role of quantum capacitance on the random dopant fluctuation induced threshold voltage variability in junctionless InGaAs FinFETs
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DOI: 10.1016/j.sse.2020.107862
Abstract: Abstract This paper reports an investigation of the effects of varying different device parameters on the random-dopant-fluctuation (RDF) induced threshold voltage variability (σVT) in junctionless (JL) InGaAs FinFETs. Such investigation is made by means of… read more here.
Keywords: induced threshold; ingaas finfets; threshold voltage; dopant fluctuation ... See more keywords