Development of ferroelectric domains and topological defects in vacancy doped ceramics of h-LuMnO3
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DOI: 10.1063/1.4996349
Abstract: Self-doping of the h-LuMnxO3±δ (0.92 ≤ x ≤ 1.12) phase and changes in the sintering time are applied to investigate the formation and annihilation of antiphase ferroelectric (FE) domains in bulk ceramics. The increase in the annealing time in… read more here.
Keywords: topological defects; doped ceramics; microscopy; vacancy ... See more keywords