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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-019-07919-8
Abstract: p -Type FeNbSb-based half-Heusler compounds exhibit promising thermoelectric (TE) performance under high temperatures. Herein, the optimal sintering temperature and pressure of these compounds were determined. Sintering temperature can affect relative density, and consequently, improve TE…
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Keywords:
heusler compounds;
doped fenbsb;
half heusler;
performance ... See more keywords