Boltzmann Thermometry in Cr3+‐Doped Ga2O3 Polymorphs: The Structure Matters!
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Optical Materials"
DOI: 10.1002/adom.202100033
Abstract: The performance of luminescent Cr3+‐doped thermometers is strongly influenced by the locally surrounding ligand field. A universal relationship between the thermometric performance and structural/chemical parameters is highly desirable to drive the development of effective Cr3+‐based… read more here.
Keywords: cr3; cr3 doped; ga2o3 polymorphs; structure ... See more keywords
Characterization and photoluminescence of Sn-doped β-Ga2O3 nanowires formed by thermal evaporation
Sign Up to like & getrecommendations! Published in 2020 at "Chemical Physics Letters"
DOI: 10.1016/j.cplett.2020.137624
Abstract: Abstract Sn-doped β-Ga2O3 nanowires were fabricated by V-L-S mechanism using a thermal process at 850 °C. XRD patterns revealed that the Sn4+ ions substituted at Ga3+ lattice sites. HRTEM confirmed that both the Sn-doped and… read more here.
Keywords: ga2o3 nanowires; characterization photoluminescence; photoluminescence doped; doped ga2o3 ... See more keywords
Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2019.125455
Abstract: Abstract In this study, the structure, morphology, electrical and optical properties of Si and Ta co-doped gallium oxide (Ga2O3) films deposited on (1 0 0) Ga2O3, (0 0 0 1) sapphire and quartz substrates by pulsed laser deposition are analyzed.… read more here.
Keywords: laser deposition; ga2o3 films; doped ga2o3; substrates doped ... See more keywords
Effect of Au nanoparticles on the optical and electrical properties of Nb-doped β-Ga2O3 film
Sign Up to like & getrecommendations! Published in 2018 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.06.051
Abstract: Abstract The Nb-doped β-Ga2O3 (β-Ga2O3:Nb) thin films have been deposited on the p-Si and Au nanoparticles decorated p-Si substrates by radio frequency magnetron technique in argon ambient. All the annealed β-Ga2O3:Nb films are composed of… read more here.
Keywords: nanoparticles optical; ga2o3; effect nanoparticles; optical electrical ... See more keywords
Enhanced Photoresponsivity UV-C Photodetectors Using a p-n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga2O3 Microflake/MnO Quantum Dots.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c18900
Abstract: Solar-blind self-powered UV-C photodetectors suffer from low performance, while heterostructure-based devices require complex fabrication and lack p-type wide band gap semiconductors (WBGSs) operating in the UV-C region ( read more here.
Keywords: band; doped ga2o3; band gap; type ... See more keywords
Efficient pure green emission from Er-doped Ga2O3 films
Sign Up to like & getrecommendations! Published in 2017 at "CrystEngComm"
DOI: 10.1039/c7ce00553a
Abstract: This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga2O3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green… read more here.
Keywords: pure; pure green; green emission; ga2o3 films ... See more keywords
Cobalt-doped Zn(O,S)/Ga2O3 nanoheterojunction composites for enhanced hydrogen production
Sign Up to like & getrecommendations! Published in 2018 at "New Journal of Chemistry"
DOI: 10.1039/c7nj05124g
Abstract: Cobalt-doped Zn(O,S)/Ga2O3 nanoheterojunction composites with different Co contents were synthesized and characterized. The as-prepared nanocomposite photocatalysts were tested for their capabilities to evolve hydrogen with ethanol as a hole scavenger under low power UV illumination… read more here.
Keywords: hydrogen; enhanced hydrogen; cobalt doped; ga2o3 nanoheterojunction ... See more keywords
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4991363
Abstract: Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3 showed single crystal, homoepitaxial growth as determined by high resolution transmission electron microscopy… read more here.
Keywords: laser deposition; ga2o3; doped ga2o3; 010 ga2o3 ... See more keywords
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
Sign Up to like & getrecommendations! Published in 2021 at "APL Materials"
DOI: 10.1063/5.0038861
Abstract: β-Ga2O3 is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy, we find the thermodynamically unstable γ-phase is a ubiquitous structural defect… read more here.
Keywords: phase inclusions; phase; alxga1 2o3; ga2o3 films ... See more keywords
Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0052601
Abstract: Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped β-Ga2O3 Schottky rectifiers irradiated with 18 MeV alpha particles and 10 MeV protons. Both diffusion length and… read more here.
Keywords: ga2o3 schottky; schottky rectifiers; non equilibrium; doped ga2o3 ... See more keywords
Deep UV transparent conductive Si-doped Ga2O3 thin films grown on Al2O3 substrates
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0147004
Abstract: β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped… read more here.
Keywords: doped ga2o3; thin films; films grown; ga2o3 films ... See more keywords