Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method
Sign Up to like & getrecommendations! Published in 2017 at "Crystal Research and Technology"
DOI: 10.1002/crat.201700052
Abstract: In this wok, a novel multi-crucible Bridgman method is developed to produce the O 2 inch Si-doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same… read more here.
Keywords: gaas crystals; crucible bridgman; bridgman method; doped gaas ... See more keywords
Intrinsic point defects in pristine and Zn-doped GaAs nanowire surfaces: A first-principles investigation
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.145906
Abstract: Abstract Utilizing first-principles calculations, we have systematically investigated on the impact of surface point defects on the stability, electronic and optical properties of pristine and Zn-doped GaAs nanowires. Different defect types (antisite, interstitial and vacancy… read more here.
Keywords: pristine doped; point defects; gaas nanowires; doped gaas ... See more keywords
Phase Diagram for Twinning Superlattice Te-Doped GaAs Nanowires.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c04680
Abstract: Twinning superlattices (TSLs) are a growing class of semiconductor structures proposed as a means of phonon and optical engineering in nanowires (NWs). In this work, we examine TSL formation in Te-doped GaAs NWs grown by… read more here.
Keywords: superlattice doped; phase diagram; diagram twinning; gaas nanowires ... See more keywords
Double-Sided Nonalloyed Ohmic Contacts to Si-doped GaAs for Plasmoelectronic Devices
Sign Up to like & getrecommendations! Published in 2019 at "ACS Omega"
DOI: 10.1021/acsomega.8b03260
Abstract: There is increasing demand for the ability to form ohmic contacts without lossy intermediate layers on both the top and bottom sides of metal–semiconductor–metal plasmoelectronic devices such as quantum cascade lasers and metasurface photodetectors. Although… read more here.
Keywords: plasmoelectronic devices; nonalloyed ohmic; ohmic contacts; doped gaas ... See more keywords
Magnetoplastic Effect in Te-Doped GaAs Single Crystals
Sign Up to like & getrecommendations! Published in 2020 at "Crystallography Reports"
DOI: 10.1134/s1063774520010277
Abstract: Abstract The influence of a dc magnetic field on the motion of growth dislocations with a density of (0.7–7.0) × 10 4 cm –2 and the electron density in the range of 5 × 10… read more here.
Keywords: gaas single; single crystals; density; doped gaas ... See more keywords
Directional emission from beryllium doped GaAs/AlGaAs nanowires
Sign Up to like & getrecommendations! Published in 2017 at "Technical Physics Letters"
DOI: 10.1134/s1063785017090085
Abstract: The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties… read more here.
Keywords: emission; beryllium doped; emission beryllium; directional emission ... See more keywords
Evaluation of In Doped GaAs Alloys to Optimize Electronic, Thermoelectric and Mechanical Properties
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15051781
Abstract: The electronic, mechanical and transport properties of the In substitution in GaAs are investigated by the TB-mBJ potential, BoltzTraP code and Charpin tensor matrix analysis using Wien2k code. The formation energies of the alloys Ga1−xInxAs… read more here.
Keywords: electronic thermoelectric; gaas alloys; alloys optimize; evaluation doped ... See more keywords
Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano10020340
Abstract: GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide… read more here.
Keywords: features photoelectric; irradiation; gamma irradiation; structural features ... See more keywords