Magnetism of 3d Transition Metals Doped 2H, 4H and 6H-GaN Polytypes
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-016-3917-0
Abstract: We present spin-polarized density-functional theory study of substitutional 3d transition metal (TM) atoms (Sc → Ni) in various host polytypes of GaN. For the structural parameters, we found that a(c) decreases (increases) from Sc to… read more here.
Keywords: transition metals; magnetism transition; doped gan; gan polytypes ... See more keywords
LDA + U Study of Induced Half Metallicity in Cr-Doped GaN
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Superconductivity and Novel Magnetism"
DOI: 10.1007/s10948-016-3938-8
Abstract: Half-metallic ferromagnetism in the Ga1 − xCrxN compound at different concentrations, x = 25, 12.5 and 6.25 %, have been investigated using density functional theory as implemented in code Spanish Initiative for Electronic Simulations with… read more here.
Keywords: half metallic; study induced; half metallicity; lda study ... See more keywords
A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5752-x
Abstract: We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum… read more here.
Keywords: thin films; gan thin; glass; glass polyethylene ... See more keywords
Design of a new two-dimensional diluted magnetic semiconductor: Mn-doped GaN monolayer
Sign Up to like & getrecommendations! Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2016.10.179
Abstract: Abstract To meet the need of low-dimensional spintronic devices, we investigate the electronic structure and magnetic properties of Mn-doped GaN monolayer using first-principles method. We find the nonmagnetic GaN monolayer exhibits half-metallic ferromagnetism by Mn… read more here.
Keywords: monolayer; doped gan; magnetic semiconductor; gan monolayer ... See more keywords
Detection of SF6 decomposition components by pristine and Cr-doped GaN based on the first-principles theory
Sign Up to like & getrecommendations! Published in 2021 at "Computational and Theoretical Chemistry"
DOI: 10.1016/j.comptc.2021.113431
Abstract: Abstract In this work, the first-principles theory is used to simulate the adsorption behavior of four SF6 characteristic decomposed gases on the pristine and Cr-doped GaN (Cr-GaN). The feasibility of the GaN for application as… read more here.
Keywords: principles theory; first principles; sf6; adsorption ... See more keywords
The important role of Ga vacancies in the ferromagnetic GaN thin films
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2016.12.405
Abstract: Abstract Room-temperature ferromagnetism was observed in the unintentionally doped GaN films, which were fabricated using laser molecular beam epitaxy followed by annealing process at different temperatures from 800 to 1000 °C for 25 min in flowing nitrogen… read more here.
Keywords: role vacancies; temperature; important role; doped gan ... See more keywords
Adsorption of toxic gas molecules on pristine and transition metal doped hexagonal GaN monolayer: A first-principles study
Sign Up to like & getrecommendations! Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2019.04.001
Abstract: Abstract Using the first-principles calculations based on density functional theory (DFT-D2 method), we systematically study the structural, energetic, electronic and magnetic properties of toxic gas molecules (H2S, NH3 and SO2) adsorbed on pristine and transition… read more here.
Keywords: gas; first principles; gas molecules; adsorption ... See more keywords
Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-56306-0
Abstract: We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm2V−1s−1 at an electron concentration of 2.9 × 1020 cm−3, prepared using pulsed sputtering deposition (PSD). With an increase in the doping concentration,… read more here.
Keywords: sputtering deposition; pulsed sputtering; highly conductive; doped gan ... See more keywords
Study of the heavily p-type doping of cubic GaN with Mg
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-73872-w
Abstract: We have studied the Mg doping of cubic GaN grown by plasma-assisted Molecular Beam Epitaxy (PA-MBE) over GaAs (001) substrates. In particular, we concentrated on conditions to obtain heavy p-type doping to achieve low resistance… read more here.
Keywords: doping cubic; cubic gan; gan; type doping ... See more keywords
Stable-wavelength operation of Europium-doped GaN nanocolumn light-emitting diodes grown by rf-plasma-assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Electronics Letters"
DOI: 10.1049/el.2017.0447
Abstract: For the first time, a rare-earth-doped GaN nanocolumn light-emitting diode is fabricated on an n-type (111) Si substrate, grown by rf-plasma-assisted molecular beam epitaxy. The nanocolumn structure remained in the n-GaN and europium-doped GaN active… read more here.
Keywords: nanocolumn light; gan nanocolumn; plasma assisted; light emitting ... See more keywords
Electrical properties of Si-doped GaN prepared using pulsed sputtering
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4975056
Abstract: In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range… read more here.
Keywords: properties doped; doped gan; gan prepared; prepared using ... See more keywords