Optimizing Annealing Process for Ferroelectric Y‐Doped HfO2 Thin Films by All‐Inorganic Aqueous Precursor Solution
Sign Up to like & getrecommendations! Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000585
Abstract: 10 nm thick yttrium doped HfO2 (Y:HfO2) thin films are prepared on Si (100) substrates by the chemical solution deposition method using all‐inorganic aqueous salt precursors. The influence of the annealing process, consisting of annealing… read more here.
Keywords: thin films; hfo2 thin; doped hfo2; inorganic aqueous ... See more keywords
Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering
Sign Up to like & getrecommendations! Published in 2018 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.04.093
Abstract: Abstract 10 nm-thick ferroelectric (FE) HfO2 films with 1.5 mol% yttrium-doping were fabricated by mid-frequency reactive magnetron co-sputtering deposition on bare Si and underlying metal Hf. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from… read more here.
Keywords: doped hfo2; effects buffer; layer; buffer layer ... See more keywords
Synthesis and characterization of Ce-doped HfO2 nanoparticles in molten chlorides
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2016.09.122
Abstract: Abstract Ce-doped HfO 2 nanoparticles were successfully prepared in molten chlorides. Nanoparticles were obtained at 380 °C during 1 h in a LiCl/KCl molten flux. The Ce-doped HfO 2 nanoparticles showed sizes below 7 nm and spherical shapes.… read more here.
Keywords: hfo nanoparticles; doped hfo2; characterization doped; doped hfo ... See more keywords
Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b19558
Abstract: HfO2-based unconventional ferroelectric materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a route to understand the… read more here.
Keywords: doped hfo2; ferroelectricity epitaxial; microscopy; epitaxial doped ... See more keywords
Ferroelectricity in Lu doped HfO2 layers
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4998336
Abstract: Doped HfO2 has become a promising candidate for non-volatile memory devices since it can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have been investigated for the stabilization of… read more here.
Keywords: doped hfo2; voltage; polarization; ferroelectricity doped ... See more keywords
Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5046844
Abstract: The pyroelectric response of polycrystalline, Si-doped HfO2 layers with a thickness of 20 nm is investigated in a frequency range of 2 Hz to 20 kHz. Local Joule heating of the pyroelectric material by a deposited nickel strip… read more here.
Keywords: frequency; pyroelectric response; frequency range; doped hfo2 ... See more keywords
A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0018199
Abstract: The Gibbs energy can yield fundamental insight into the material properties of ferroelectrics such as energy barriers and phase transitions. Particularly for newly emerging classes of ferroelectric and antiferroelectric materials, such as fluorite-structured HfO2 and… read more here.
Keywords: doped hfo2; gibbs energy; energy; zro2 ... See more keywords
Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film
Sign Up to like & getrecommendations! Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac7cf7
Abstract: An investigation was conducted with regard to the effect of etching process on the ferroelectric (FE) characteristics of different device structures with Al-doped HfO2 thin films; further, the effect of the rapid thermal annealing temperature… read more here.
Keywords: doped hfo2; annealing temperature; process; etching process ... See more keywords
Experimental study of endurance characteristics of Al-doped HfO2 ferroelectric capacitor
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb7fc
Abstract: In this work, the endurance characteristics of Al-doped HfO2 (HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the high annealing temperature… read more here.
Keywords: endurance; characteristics doped; doped hfo2; oxygen ... See more keywords
Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2831784
Abstract: In this letter, ferroelectric memory performance of TiN/Y-doped-HfO2 (HYO)/TiN capacitors is investigated under proton radiation with 3-MeV energy and different fluence (5e13, 1e14, 5e14, and 1e15 ions/cm2). X-ray diffraction patterns confirm that the orthorhombic phase… read more here.
Keywords: doped hfo2; ferroelectric memory; proton; proton radiation ... See more keywords
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15062251
Abstract: Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of… read more here.
Keywords: hfo2 based; doped hfo2; tunnel junctions; memory ... See more keywords