Molecular Beam Epitaxy of Homogeneous Topological HgTe on Doped InAs Substrate
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DOI: 10.1002/adfm.202413229
Abstract: HgTe has been considered to be one of the most versatile topological materials. Depending on the in‐plane strain, Weyl and Dirac semi‐metal, as well as topological insulator phases, are feasible. Here, for the first time… read more here.
Keywords: hgte; beam epitaxy; molecular beam; doped inas ... See more keywords