Control of Mg content and carrier concentration via post annealing under different Mg partial pressures for Sb-doped Mg2Si thermoelectric material
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DOI: 10.1016/j.jssc.2017.10.003
Abstract: Abstract An approach to control the Mg content in Sb-doped Mg2Si via post annealing under different Mg partial pressures is developed. Annealing under low and high Mg partial pressures (≤ 1 × 10–1 Pa and 1… read more here.
Keywords: partial pressures; doped mg2si; control content; carrier ... See more keywords