Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique
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DOI: 10.1016/j.solmat.2019.110256
Abstract: Abstract In this work, we investigated the gettering of the in-situ phosphorus-doped polysilicon passivating contact that was realized through plasma-enhanced chemical-vapor deposition (PECVD) technology. Interstitial iron (Fei) induced artificially was used as the marker for… read more here.
Keywords: phosphorus doped; doped polysilicon; polysilicon; passivating contact ... See more keywords