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Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-6565-7
Abstract: Under the condition of the fixed Si3N4 layer thickness of 1.1 nm, Si-QDs embedded in B-doped SiNx/Si3N4 multilayer thin films with various SiNx layer thickness were fabricated respectively. Si-QDs with controllable and nearly uniform size…
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Keywords:
sinx si3n4;
doped sinx;
size;
embedded doped ... See more keywords