Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors
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DOI: 10.1016/j.mee.2017.11.002
Abstract: Abstract Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6 nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed related… read more here.
Keywords: highly doped; role highly; substrate bipolar; resistive switching ... See more keywords
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Communications Technology and Electronics"
DOI: 10.1134/s1064226917030068
Abstract: Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been… read more here.
Keywords: heavily doped; photoelectric characteristics; focal plane; deposited heavily ... See more keywords