The Compacts of Boron-Doped Synthetic Diamond: Electrochemical Properties of Samples with Extremely High Doping Level
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DOI: 10.1134/s102319351902006x
Abstract: Compacts of boron-doped synthetic diamond with extremely high doping level are obtained at a pressure of 8–9 GPa and temperature about 2500 K from graphite-boron carbide (5 or 7%) mixtures. The boron content in the… read more here.
Keywords: doping level; doped synthetic; boron doped; diamond ... See more keywords