Electroluminescence from Er-doped ZnGa2O4 spinel nanofilms fabricated by atomic layer deposition on silicon
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DOI: 10.1016/j.optmat.2021.111691
Abstract: Abstract Erbium doped ZnGa2O4 spinel nanofilms are fabricated by atomic layer deposition on Si substrates, the electroluminescence (EL) devices based on which present intense ∼1.53 μm near-infrared emission. The annealing above 1000 °C leads to significant evaporation… read more here.
Keywords: nanofilms fabricated; fabricated atomic; doped znga2o4; spinel nanofilms ... See more keywords