A Physics-Based Threshold Voltage Model for Junction-Less Double Gate FETs Having Vertical Structural and Doping Asymmetry
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DOI: 10.1109/ted.2019.2922764
Abstract: A physics-based threshold voltage model of junction-less (JL) double gate (DG) FETs with vertical structural and doping asymmetry is being proposed in this paper. The numerical implementation of vertical asymmetric doping in the FET devices… read more here.
Keywords: structural doping; doping asymmetry; physics; physics based ... See more keywords