Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor.
Sign Up to like & getrecommendations! Published in 2022 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c06283
Abstract: p-Type doping in Cu(I)-based semiconductors is pivotal for solar cell photoabsorbers and hole transport materials to improve the device performance. Impurity doping is a fundamental technology to overcome the intrinsic limits of hole concentration controlled… read more here.
Keywords: hole doping; defect; impurity; cation ... See more keywords
The Role of Mn Doping on Ce-Based γ-Al2O3 Catalysts for Phenol Degradation
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DOI: 10.1089/ees.2020.0494
Abstract: In this article, Mn doping on Ce-based γ-Al2O3 (i.e., Mn-Ce-γ-Al2O3) was synthesized and then employed as catalysts to study the removal of phenol from aqueous solutions through catalytic ozonation... read more here.
Keywords: al2o3 catalysts; role doping; based al2o3; phenol degradation ... See more keywords
Influence of Zn+2 Doping on Ni-Based Nanoferrites; (Ni1−x ZnxFe2O4)
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DOI: 10.3390/nano9071024
Abstract: Nickel zinc nanoferrites (Ni1−xZnxFe2O4) were synthesized via a chemical co-precipitation method having stoichiometric proportion (x) altering from 0.00 to 1.00 in steps of 0.25. The synthesized nanoparticles were sintered at 800 °C for 12 h.… read more here.
Keywords: zinc; influence doping; ni1 znxfe2o4; doping based ... See more keywords