Defect-Free Sb-Doping in Bi2O2Se Achieves Two-Order-of-Magnitude Reduction in Saturation Intensity While Preserving High Carrier Mobility.
Sign Up to like & getrecommendations! Published in 2025 at "Advanced science"
DOI: 10.1002/advs.202518454
Abstract: Doping generally introduces performance trade-offs in materials, yet overcoming this fundamental limitation remains crucial for advancing materials research. Bi2O2Se exhibits exceptional electronic properties as a promising semiconductor, yet its nonlinear optical response under low excitation… read more here.
Keywords: carrier; defect free; saturation intensity; doping bi2o2se ... See more keywords
The influence of Ca doping in Bi2O2Se: A first-principles investigation
Sign Up to like & getrecommendations! Published in 2020 at "Computational Materials Science"
DOI: 10.1016/j.commatsci.2020.109684
Abstract: Abstract Bi2O2Se, as a member of bismuth oxychalcogenides, is regarded as a promising candidate for optoelectronic applications, such as phototransistors, photodetectors, pulsed lasers and photodiodes. Throughout the research progress of Bi2O2Se, the crystal quality of… read more here.
Keywords: influence doping; doping bi2o2se; bi2o2se first; bi2o2se ... See more keywords