Doping Dependent Magnetic Behavior in MBE Grown GaAs1-xSbx Nanowires
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DOI: 10.1038/s41598-020-65805-4
Abstract: Intrinsic and Te-doped GaAsSb nanowires with diameters ~100–120 nm were grown on a p-type Si(111) substrate by molecular beam epitaxy (MBE). Detailed magnetic, current/voltage and low-energy electron energy loss spectroscopy measurements were performed to investigate the… read more here.
Keywords: behavior mbe; mbe; behavior; dependent magnetic ... See more keywords