Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.035
Abstract: Abstract Incorporation of beryllium (Be) and tellurium (Te) dopants in epitaxially grown Al 0.9 Ga 0.1 As 0.06 Sb 0.94 layers was investigated. Carrier concentrations and mobilities of the doped layers were obtained from room… read more here.
Keywords: incorporation al0; dopant incorporation; doping efficiency; incorporation ... See more keywords
Insight into doping efficiency of organic semiconductors from the analysis of the density of states in n-doped C60 and ZnPc
Sign Up to like & getrecommendations! Published in 2018 at "Nature Materials"
DOI: 10.1038/s41563-018-0030-8
Abstract: Doping plays a crucial role in semiconductor physics, with n-doping being controlled by the ionization energy of the impurity relative to the conduction band edge. In organic semiconductors, efficient doping is dominated by various effects… read more here.
Keywords: doping efficiency; insight doping; density states; organic semiconductors ... See more keywords
Optimizing the Doping Efficiency and Thermoelectric Properties of Isoindigo-Based Conjugated Polymers Using Side Chain Engineering
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Materials Chemistry C"
DOI: 10.1039/d3tc00883e
Abstract: The chemical design of side chains and the physical control of molecular aggregation on conjugated polymer semiconductors have been demonstrated to be effective strategies for achieving efficient doping and charge... read more here.
Keywords: doping efficiency; properties isoindigo; optimizing doping; efficiency thermoelectric ... See more keywords
Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-c
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5029810
Abstract: In this study, we aim to improve our understanding of the doping mechanism involved in the polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) doped with tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] [Mo(tfd-COCF3)3]. We follow the evolution of the hole density with dopant concentration… read more here.
Keywords: mechanism involved; understanding doping; doping efficiency; doping mechanism ... See more keywords
Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5124904
Abstract: The Mg doping efficiency is found to be drastically enhanced in the p-GaN films grown on the free-standing GaN substrates by metal organic chemical vapor deposition. The free hole concentrations are five and ten times… read more here.
Keywords: gan substrates; doping efficiency; type; efficiency ... See more keywords