Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors
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DOI: 10.1002/adfm.201902591
Abstract: D.K., Y.H.L., and T.D.A. are grateful to the European Research Council (ERC) AMPRO project no. 280221 for financial support. T.D.A. is grateful to King Abdullah University of Science and Technology (KAUST) for the financial support. read more here.
Keywords: impact layer; transport bias; electron transport; doping electron ... See more keywords