Doping Elemental 2D Semiconductor Te through Surface Se Substitutions.
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DOI: 10.1103/physrevlett.133.236201
Abstract: The development of two-dimensional (2D) semiconductors is limited by the lack of doping methods. We propose surface isovalent substitution as an efficient doping mechanism for 2D semiconductors by revealing the evolution of the structure and… read more here.
Keywords: substitutions doping; semiconductor surface; surface; doping elemental ... See more keywords