Role of Al doping in the filament disruption in HfO2 resistance switches.
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DOI: 10.1088/1361-6528/aa8013
Abstract: Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their… read more here.
Keywords: role doping; filament disruption; resistance; operation ... See more keywords