Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Express"
DOI: 10.7567/apex.10.041102
Abstract: The Ge doping of β-Ga2O3(010) films was investigated using plasma-assisted molecular beam epitaxy as the growth method. The dependences of the amount of Ge incorporated on the substrate temperature, Ge-cell temperature, and growth regime were… read more here.
Keywords: doping ga2o3; plasma assisted; molecular beam; beam epitaxy ... See more keywords