Sign Up to like & get
recommendations!
1
Published in 2017 at "Applied Physics Express"
DOI: 10.7567/apex.10.041102
Abstract: The Ge doping of β-Ga2O3(010) films was investigated using plasma-assisted molecular beam epitaxy as the growth method. The dependences of the amount of Ge incorporated on the substrate temperature, Ge-cell temperature, and growth regime were…
read more here.
Keywords:
doping ga2o3;
plasma assisted;
molecular beam;
beam epitaxy ... See more keywords