Features of the selective manganese doping of GaAs structures
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DOI: 10.1134/s1063782617110148
Abstract: The effect of technological parameters on the selective manganese doping of arsenide–gallium heterostructures fabricated by a combination of methods of MOS-hydride epitaxy and pulsed-laser deposition is investigated. As these parameters, the impurity content in the… read more here.
Keywords: manganese doping; features selective; selective manganese; gaas structures ... See more keywords