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Published in 2017 at "Journal of Materials Science"
DOI: 10.1007/s10853-017-1394-x
Abstract: Aimed at improving the actual photoemission performance of nanowire photocathode, an axial exponential-doping GaN nanowire photocathode is proposed. Based on two-dimensional continuity equation and finite difference method, the quantum efficiency of this exponential-doping GaN nanowire…
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Keywords:
photocathode;
quantum efficiency;
gan nanowire;
nanowire photocathode ... See more keywords
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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04560
Abstract: GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. In a systematic series of experiments, the amount of Mg supplied during NW growth was…
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Keywords:
nanowires characterized;
gan nanowires;
type doping;
doping gan ... See more keywords
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Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-72862-2
Abstract: High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The…
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Keywords:
transmutation doping;
gan semiconductors;
neutron transmutation;
doping gan ... See more keywords
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Published in 2023 at "Materials"
DOI: 10.3390/ma16031227
Abstract: Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging…
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Keywords:
inn system;
polarization doping;
polarization;
gan inn ... See more keywords