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Achieving N/P Doping of MoS₂ Through ZnO Interface Engineering in Heterostructures for Semiconductor Devices

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0 Published in 2025 at "IEEE Journal of the Electron Devices Society"

DOI: 10.1109/jeds.2025.3594757

Abstract: The aim of this study is to explore the electronic properties of the MoS2/ZnO heterostructure and their potential applications in semiconductor devices. We analyzed the impact of N/P doping on electronic properties of ZnO structures… read more here.

Keywords: semiconductor; mos zno; doping mos; semiconductor devices ... See more keywords