ECV Doping Profile Measurements in Silicon Using Conventional Potentiostat
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-018-6670-2
Abstract: Formation of p–n junctions by phosphorus diffusion from liquid dopant in Si was investigated using a custom-built procedure for performing electrochemical capacitance–voltage (ECV) measurements. The feasibility of using a potentiostat equipped with an impedance module… read more here.
Keywords: ecv; potentiostat; doping profile; profile measurements ... See more keywords
Reconstruction of the doping profile in Vlasov–Poisson system
Sign Up to like & getrecommendations! Published in 2024 at "Inverse Problems"
DOI: 10.1088/1361-6420/ad7c78
Abstract: We study the inverse problem of recovering the doping profile in the stationary Vlasov–Poisson equation, given the knowledge of the incoming and outgoing measurements at the boundary of the domain. This problem arises from identifying… read more here.
Keywords: reconstruction doping; doping profile; profile vlasov; vlasov poisson ... See more keywords
Analytical Modeling of 3D NAND Flash Cell With a Gaussian Doping Profile
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3198398
Abstract: The incessantly increasing demand for highly dense storage medium in this era of big-data has led to the development of 3D NAND Flash memories. 3D NAND Flash based SSDs have revolutionized edge storage and become… read more here.
Keywords: flash cell; flash; nand flash; doping profile ... See more keywords
An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2019.2962007
Abstract: To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device’s breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV)… read more here.
Keywords: drift doping; doping profile; voltage; soi ... See more keywords
High Power Added Efficiency Enhancement-Mode Γ-Gate RF HEMT With High/Low p-GaN Doping Profile
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2025.3551313
Abstract: $0.5~\mu $ m enhancement-mode (E-mode) p-GaN $\Gamma $ -gate RF HEMT with engineered Mg doping profile in p-GaN layer was studied for high power amplifier application. With high/low Mg doping profile design in p-GaN, the… read more here.
Keywords: gate; doping profile; tex math; inline formula ... See more keywords
A New Physical Understanding of Lateral Step Doping Technique via Effective Concentration Profile Concept
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2903346
Abstract: The drift region doping profile plays a significant role in affecting the performance of lateral power devices on silicon-on-insulator (SOI) substrate. However, due to the modeling difficulty of the 2-D solution, the physical meaning of… read more here.
Keywords: doping profile; profile; concentration profile; effective concentration ... See more keywords
Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3418292
Abstract: The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage… read more here.
Keywords: gate leakage; leakage current; doping profile;
Potential of crystals with a nonuniform doping profile for a Fe2+:ZnSe laser
Sign Up to like & getrecommendations! Published in 2020 at "Optical Materials Express"
DOI: 10.1364/ome.401095
Abstract: Special nonuniform doping profiles are proposed for Fe2+:ZnSe crystals, which can increase the output energy of Fe2+:ZnSe lasers in comparison with those based on active elements with a uniform distribution of the doping agent. We… read more here.
Keywords: doping profile; znse; nonuniform doping; fe2 znse ... See more keywords