Electronic and doping properties of hexagonal silicon carbide with stacking faults induced cubic inclusions
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DOI: 10.1063/5.0051942
Abstract: Silicon carbide (SiC) has been considered one of the most important wide bandgap semiconductors for both scientific interest and technological applications. The existence of stacking faults induced inclusions, originated from the “wrong” stacking sequences of… read more here.
Keywords: silicon carbide; properties hexagonal; faults induced; stacking faults ... See more keywords