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Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2647841
Abstract: The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor was compared with the more common autodoping technique. Breakdown and dynamic behavior of…
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Keywords:
techniques dynamic;
effect different;
doping techniques;
carbon ... See more keywords