Analytical Study of Effect of Channel Doping on Threshold Voltage of Metal Gate High-k SiGe MOSFET
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DOI: 10.1007/s12633-017-9631-0
Abstract: The paper reports the analytical model for the analysis of the effects of channel doping on the threshold voltage. A silicon germanium p-MOSFET with high-k dielectric material along with a metal gate is used for… read more here.
Keywords: mosfet; threshold voltage; channel doping; doping threshold ... See more keywords