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Doping top-down e-beam fabricated germanium nanowires using molecular monolayers

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1 Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2016.10.038

Abstract: Abstract This paper describes molecular layer doping of Ge nanowires. Molecules containing dopant atoms are chemically bound to a germanium surface. Subsequent annealing enables the dopant atoms from the surface bound molecules to diffuse into… read more here.

Keywords: beam fabricated; germanium; doping top; top beam ... See more keywords