Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2016.11.039
Abstract: Abstract Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead… read more here.
Keywords: germanium; source; gain; dopingless tunnel ... See more keywords
Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2949064
Abstract: The growing concern of single event upset (SEU) in sub-20 nm CMOS technology based field-effect transistors (FETs) has become a key challenge. Therefore, in this paper we have investigated performance degradation of digital benchmark circuits… read more here.
Keywords: tex math; dopingless; jlt; junctionless ... See more keywords