Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance
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DOI: 10.1016/j.spmi.2016.11.039
Abstract: Abstract Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead… read more here.
Keywords: germanium; source; gain; dopingless tunnel ... See more keywords