Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices
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DOI: 10.1038/s41598-025-01325-3
Abstract: This paper presents a model of total ionizing dose (TID) effects on the generation of Si/SiO\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2$$\end{document} interface traps in MOS devices, and their density of states… read more here.
Keywords: dose tid; tid effects; ionizing dose; total ionizing ... See more keywords