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Published in 2018 at "Nanoscale Research Letters"
DOI: 10.1186/s11671-018-2472-y
Abstract: The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot…
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Keywords:
inas gaas;
quantum;
quantum dot;
dot lasers ... See more keywords
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1
Published in 2018 at "Optics express"
DOI: 10.1364/oe.26.007022
Abstract: We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer enables us to grow a high quality…
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Keywords:
quantum dot;
epitaxially grown;
lasers epitaxially;
dot lasers ... See more keywords
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1
Published in 2021 at "Optics express"
DOI: 10.1364/oe.433030
Abstract: With the development of dry fiber over the past two decades, the E-band has become a new telecommunication wavelength. However, owing to material constraints, an effective high-performance semiconductor light source has not yet been realized.…
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Keywords:
quantum dot;
dot lasers;
metamorphic buffer;
buffer ... See more keywords
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1
Published in 2022 at "Optics express"
DOI: 10.1364/oe.454895
Abstract: We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si (001) templates and low-temperature growth for GaInP upper…
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Keywords:
slope efficiency;
dot lasers;
planar exact;
quantum dot ... See more keywords
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0
Published in 2019 at "Optics letters"
DOI: 10.1364/ol.44.000347
Abstract: Quantum dot lasers display many unique dynamic phenomena when optically injected. Bistability has been predicted in a region of high injection strength. Experimentally, we show that a square wave phenomenon, rather than a phase-locked bistability,…
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Keywords:
dot lasers;
square wave;
injection;
quantum dot ... See more keywords
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2
Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12152704
Abstract: The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally…
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Keywords:
quantum dot;
dot lasers;
virtual substrate;
substrate ... See more keywords