Articles with "dot lasers" as a keyword



Infrared Colloidal Quantum Dot Lasers

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Published in 2025 at "Advanced Optical Materials"

DOI: 10.1002/adom.202500724

Abstract: Infrared (IR) lasers are crucial for diverse applications including optical communications, environmental sensing, biomedical imaging, ranging, and process quality control. Conventional IR lasers, based on III‐V semiconductor materials or optical fiber systems, face significant challenges… read more here.

Keywords: quantum dot; infrared colloidal; colloidal quantum; emission ... See more keywords

Gradual degradation in InAs quantum dot lasers on Si and GaAs.

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Published in 2024 at "Nanoscale"

DOI: 10.1039/d3nr05311c

Abstract: Reliable quantum dot lasers on silicon are a key remaining challenge to successful integrated silicon photonics. In this work, quantum dot (QD) lasers on silicon with and without misfit dislocation trapping layers are aged for… read more here.

Keywords: quantum dot; dot lasers; gradual degradation; active region ... See more keywords

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

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Published in 2018 at "Nanoscale Research Letters"

DOI: 10.1186/s11671-018-2472-y

Abstract: The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot… read more here.

Keywords: inas gaas; quantum; quantum dot; dot lasers ... See more keywords
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Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.

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Published in 2018 at "Optics express"

DOI: 10.1364/oe.26.007022

Abstract: We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer enables us to grow a high quality… read more here.

Keywords: quantum dot; epitaxially grown; lasers epitaxially; dot lasers ... See more keywords
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InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers.

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Published in 2021 at "Optics express"

DOI: 10.1364/oe.433030

Abstract: With the development of dry fiber over the past two decades, the E-band has become a new telecommunication wavelength. However, owing to material constraints, an effective high-performance semiconductor light source has not yet been realized.… read more here.

Keywords: quantum dot; dot lasers; metamorphic buffer; buffer ... See more keywords

High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures.

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Published in 2022 at "Optics express"

DOI: 10.1364/oe.454895

Abstract: We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si (001) templates and low-temperature growth for GaInP upper… read more here.

Keywords: slope efficiency; dot lasers; planar exact; quantum dot ... See more keywords

MOCVD-grown InAs/InP quantum dot lasers with low threshold current.

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Published in 2025 at "Optics express"

DOI: 10.1364/oe.568365

Abstract: We report low-threshold-current, high-yield InAs/InP quantum dot lasers in the C- and L-bands grown by metal-organic chemical vapor deposition (MOCVD). By optimizing the epitaxial growth conditions, including the introduction of a GaAs interfacial layer, we… read more here.

Keywords: inp quantum; quantum dot; low threshold; inas inp ... See more keywords

Square wave excitability in quantum dot lasers under optical injection.

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Published in 2019 at "Optics letters"

DOI: 10.1364/ol.44.000347

Abstract: Quantum dot lasers display many unique dynamic phenomena when optically injected. Bistability has been predicted in a region of high injection strength. Experimentally, we show that a square wave phenomenon, rather than a phase-locked bistability,… read more here.

Keywords: dot lasers; square wave; injection; quantum dot ... See more keywords

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon

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Published in 2022 at "Nanomaterials"

DOI: 10.3390/nano12152704

Abstract: The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally… read more here.

Keywords: quantum dot; dot lasers; virtual substrate; substrate ... See more keywords