Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring.
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DOI: 10.1039/d1nr04263g
Abstract: Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying… read more here.
Keywords: inas inp; quantum dot; geometry; inp ... See more keywords