Formation of quantum dots in GaN/AlGaN FETs
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DOI: 10.1038/s41598-020-72269-z
Abstract: GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in… read more here.
Keywords: algan fets; gan algan; formation quantum; dots gan ... See more keywords