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Published in 2018 at "Journal of Infrared, Millimeter, and Terahertz Waves"
DOI: 10.1007/s10762-018-0476-4
Abstract: In this paper, a new model of the frequency dependence of the double-barrier THz rectifier is presented. The new structure is of interest because it can be realized by CMOS image sensor technology. Its application…
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Keywords:
model high;
self mixing;
frequency;
model ... See more keywords
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Published in 2018 at "Optik"
DOI: 10.1016/j.ijleo.2018.05.095
Abstract: Abstract Using Schrodinger equation, we have theoretically studied the quantum transport in double-barrier potential resonant tunneling diodes. To obtain higher peak in transmission coefficient in twofold barrier quantum well system require to reducing the barrier…
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Keywords:
barrier;
transmission;
tunneling semiconductor;
double barrier ... See more keywords
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Published in 2017 at "Journal of Mathematical Analysis and Applications"
DOI: 10.1016/j.jmaa.2016.11.061
Abstract: Abstract In this paper, we study a double-barrier option with a stochastic volatility model whose volatility is driven by a fast mean-reverting process, where the option's payoff is extinguished as the underlying asset crosses one…
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Keywords:
volatility;
double barrier;
stochastic volatility;
barrier option ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.03.069
Abstract: Abstract The effect of δ -potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ - potential in the well region was analysed…
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Keywords:
barrier;
spin dependent;
effect potential;
dependent electron ... See more keywords
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Published in 2018 at "Journal of Applied Probability"
DOI: 10.1017/jpr.2018.17
Abstract: Abstract In this paper we obtain a recursive formula for the density of the double-barrier Parisian stopping time. We present a probabilistic proof of the formula for the first few steps of the recursion, and…
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Keywords:
double barrier;
parisian stopping;
stopping time;
barrier parisian ... See more keywords
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Published in 2020 at "AIP Advances"
DOI: 10.1063/5.0002536
Abstract: We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The…
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Keywords:
epitaxial double;
doped srtio3;
double barrier;
fully epitaxial ... See more keywords
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Published in 2020 at "AIP Advances"
DOI: 10.1063/5.0008959
Abstract: We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and…
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Keywords:
barrier quantum;
alsb gainassb;
gainassb double;
double barrier ... See more keywords
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Published in 2023 at "Technical Physics Letters"
DOI: 10.21883/tpl.2023.01.55350.19395
Abstract: Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine…
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Keywords:
double barrier;
gaas alas;
tunneling diodes;
resonant tunneling ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12101714
Abstract: Resonant tunneling devices are still under study today due to their multiple applications in optoelectronics or logic circuits. In this work, we review an out-of-equilibrium GaAs/AlGaAs double-barrier resonant tunneling diode system, including the effect of…
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Keywords:
double barrier;
resonant tunneling;
transport properties;
electronic transport ... See more keywords