Updated structure of vertical double-diffused MOSFETs for irradiation hardening against single events
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1224-7
Abstract: The gate oxide layer and parasitic bipolar junction transistor are inherent elements of vertical double-diffused power metal–oxide–semiconductor field-effect transistors (MOSFETs). Single-event gate rupture (SEGR) and single-event burnout (SEB) may be triggered by penetration of energetic… read more here.
Keywords: layer; power; single event; vertical double ... See more keywords
A New Structure for Lateral Double Diffused MOSFET to Control the Breakdown Voltage and the On-Resistance
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DOI: 10.1007/s12633-019-0092-5
Abstract: Lateral Double Diffused Metal Oxide Field Effect Transistor (LDMOS) are widely used in power applications for the high breakdown voltage. However, the device may have high on-resistance. So, the challenge for achieving high breakdown voltage… read more here.
Keywords: voltage; breakdown voltage; resistance; structure ... See more keywords