Effects of fluorine based double plasma treatment on electrical and reliability characteristics of Ge pMOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.111025
Abstract: Abstract In order to reduce bombardment or chemical etching damage of Ge pMOSFET treated by F-based plasma, an additional O2 or/and N2 plasma treatment was applied on the high-k gate dielectric in this work. The… read more here.
Keywords: based double; double plasma; reliability characteristics; plasma treatment ... See more keywords