Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.004
Abstract: Abstract The expansion of double-Shockley stacking faults (DSFs) in 4H-SiC was investigated by a photoluminescence (PL) imaging technique. To observe DSFs nondestructively, heavily-nitrogen-doped epilayers were prepared to be used as specimens and the PL technique… read more here.
Keywords: heavily nitrogen; nitrogen doped; expansion; dsfs ... See more keywords
Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5031896
Abstract: We investigated the glide velocities of 30° Si-core partial dislocations for the expansion of double-Shockley stacking faults (DSFs) in heavily nitrogen-doped 4H-SiC crystals at high temperatures of approximately 1000 °C. The heavily doped epilayers grown by… read more here.
Keywords: core partial; velocities core; partial dislocations; expansion ... See more keywords