An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab92d0
Abstract: A novel ultralow loss 4H-SiC double trenches MOSFET is presented and its mechanism is investigated by simulation. The device features two integrated heterojunction diodes (HJD) consisting of a P-type polycrystalline Silicon (P-ploy Si) and SiC,… read more here.
Keywords: double trenches; ultralow loss; loss sic; sic double ... See more keywords