Articles with "dp3 dp4" as a keyword



The identification of traps in HfO2-based FeFET with SiON as an interlayer using current transient method

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Published in 2024 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/ad8ae3

Abstract: This work investigates the current transient and trap characteristics of Si FeFET with HfZrO ferroelectric and SiON as the interfacial layer. The trap characteristics in the trapping/detrapping process based on the drain current and gate… read more here.

Keywords: dp3 dp4; current transient; time constants; different time ... See more keywords