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Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad8ae3
Abstract: This work investigates the current transient and trap characteristics of Si FeFET with HfZrO ferroelectric and SiON as the interfacial layer. The trap characteristics in the trapping/detrapping process based on the drain current and gate…
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Keywords:
dp3 dp4;
current transient;
time constants;
different time ... See more keywords