Suppression of Back-Tunneling Events in Hybrid Single-Electron Turnstiles by Source-Drain Bias Modulation
Sign Up to like & getrecommendations! Published in 2022 at "Physical Review Applied"
DOI: 10.1103/physrevapplied.19.044088
Abstract: Accuracy of single-electron currents produced in hybrid turnstiles at high operation frequencies is, among other errors, limited by electrons tunnelling in the wrong direction. Increasing the barrier transparency between the island and the leads, and… read more here.
Keywords: single electron; source drain; drain bias; electron ... See more keywords
Drain-Bias Transient Instability of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3012945
Abstract: High-voltage amorphous indium–gallium–zinc oxide thin-film transistors can be monolithically integrated into the system-on-chip platform as input–output bridges. However, a transient instability showing substantial ON-current degradation under high drain bias is discovered. This drain-bias transient instability… read more here.
Keywords: amorphous indium; instability; drain bias; indium gallium ... See more keywords