Analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel FETs with oxide interface charge
Sign Up to like & getrecommendations! Published in 2019 at "Indian Journal of Physics"
DOI: 10.1007/s12648-019-01535-2
Abstract: In this paper, we have developed an analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel field-effect transistor (CG TFET) by considering the effect of interface trap charge at Si–SiO2 interface nearby the… read more here.
Keywords: oxide sio2; model; sio2 hfo2; stacked oxide ... See more keywords
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
Sign Up to like & getrecommendations! Published in 2021 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2021.153774
Abstract: Abstract The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN high electron mobility transistor on GaN substrate was investigated and compared with Conventional AlGaN/GaN HEMT. The high frequency characteristics were measured on… read more here.
Keywords: algan gan; gan hemt; drain current; graded channel ... See more keywords
Drain current characterization of dielectric modulated split gate TFET for bio-sensing application
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105598
Abstract: Abstract This paper presents an analytical surface potential and drain current model of split gate (SG) Tunnel Field Effect Transistor (TFET) for label free detection of biomolecules e.g. protein, biotine, DNA, etc., utilizing the concept… read more here.
Keywords: dielectric; drain current; drain; split gate ... See more keywords
On the transient response of organic electrochemical transistors
Sign Up to like & getrecommendations! Published in 2017 at "Organic Electronics"
DOI: 10.1016/j.orgel.2017.03.021
Abstract: Abstract We present a universal model for the transient drain current response in organic electrochemical transistors (OECTs). Using equivalent circuits and charge injection physics, we are able to predict the drain current in OECT devices… read more here.
Keywords: response; response organic; transient response; organic electrochemical ... See more keywords
A theoretical study on the linearity of the I d -T curve of a SiC MESFET for sensor application
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2016.12.010
Abstract: Abstract This theoretical study includes the impact of ambient temperature fluctuations on the drain current of a SiC MESFET considering two field regions under the gate at a considerably high drain field. The variations of… read more here.
Keywords: sic mesfet; temperature; drain current; theoretical study ... See more keywords
Effect of temperature & phonon scattering on the drain current of a MOSFET using SL-MoS 2 as its channel material
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.07.051
Abstract: Abstract Temperature dependence of the drain current of a MOSFET plays a crucial role in the device performance. TMDs and especially SL-MoS 2 has turned out to be quite a useful material to be used… read more here.
Keywords: current mosfet; mosfet using; temperature; drain current ... See more keywords
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.12.027
Abstract: Abstract In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain… read more here.
Keywords: current collapse; algan gan; gan hemt; drain current ... See more keywords
New GaN based HEMT with Si 3 N 4 or un-doped region in the barrier for high power applications
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.04.019
Abstract: Abstract New AlGaN/GaN high electron mobility transistors (HEMTs) that their barrier layers under the gate are divided into two regions horizontally are presented in this work. Upper region is Si3N4 (SI-HEMT) or un-doped AlGaN (UN-HEMT)… read more here.
Keywords: drain current; breakdown voltage; power; hemt ... See more keywords
Drain current modeling of proposed dual material elliptical Gate-All-Around heterojunction TFET for enhanced device performance
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.04.022
Abstract: Abstract In this paper, analytical drain current modeling of proposed Dual Material (DM) Elliptical Gate-All-Around (GAA) Heterojunction TFET is developed considering depletion regions at both source/channel and drain/channel junctions. Initially, channel potential is derived and… read more here.
Keywords: drain current; heterojunction; gate; material ... See more keywords
490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics
Sign Up to like & getrecommendations! Published in 2021 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2021.108109
Abstract: Abstract In this paper, enhancement-mode AlGaN/GaN p-type GaN cap layer high electron mobility transistors (p-GaN HEMTs) with Ti/Au gate metal are fabricated and electrically characterized. The post gate annealing (PGA) treatment at 300 °C for… read more here.
Keywords: threshold voltage; drain current; gan hemts; enhancement mode ... See more keywords
Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5049618
Abstract: Effects of exposure to ultraviolet (UV) photons and thermal treatments on solution-processed amorphous indium gallium zinc oxide (a-IGZO) films were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. As a result, oxygen vacancies… read more here.
Keywords: irradiation; subsequent thermal; oxygen vacancies; spectroscopy ... See more keywords