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Published in 2017 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2017.2712284
Abstract: We have presented a compact MOSFET model, which allows us to describe the current–voltage characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities. The model…
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Keywords:
mosfet;
model;
compact modeling;
simulation ... See more keywords