High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors
Sign Up to like & getrecommendations! Published in 2020 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2020.113656
Abstract: Abstract The characterization of commercial-grade power transistors upon high levels of particle irradiation is required to enable radiation tolerant LED power supplies for the new luminaires of CERN accelerator tunnels, which represent a harsh environment… read more here.
Keywords: irradiation; hybrid drain; gan hybrid; embedded gate ... See more keywords