Performance Investigation of Silicon-on-Insulator Junctionless Drain Extended FinFET for High Power, Radio Frequency Applications
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DOI: 10.1007/s12633-020-00858-8
Abstract: This research article explores the scope of Silicon-On-Insulator (SOI) Junctionless (JL) Drain Extended (De) FinFET and compared it with Conventional SOI Drain Extended FinFET (Conv. SOI DeFinFET) for high power and high frequencies applications. The… read more here.
Keywords: high power; frequency; drain extended; drain ... See more keywords
Performance and Reliability Codesign for Superjunction Drain Extended MOS Devices
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DOI: 10.1109/ted.2017.2733043
Abstract: Conventionally, integrated drain-extended MOS (DeMOS) like high-voltage devices are designed while keeping only performance targets for a given application in mind. In this paper, for the first time, performance and reliability codesign approach using 3-D… read more here.
Keywords: reliability codesign; drain extended; extended mos; performance ... See more keywords
Drain-Extended FinFET With Embedded SCR (DeFinFET-SCR) for High-Voltage ESD Protection and Self-Protected Designs
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2949126
Abstract: This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection device and a self-protected high-voltage switch/driver… read more here.
Keywords: drain extended; scr; extended finfet; definfet scr ... See more keywords
Device, Circuit, and Reliability Assessment of Drain-Extended FinFETs for Sub-14 nm System on Chip Applications
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3020904
Abstract: This article explores the scope of drain-extended FinFET (DeFinFET) as a high-voltage (HV) device contender for Fin-based SoC applications. For the first time, guidelines for efficient and reliable HV integration in sub-14 nm FinFET nodes… read more here.
Keywords: drain; device circuit; circuit reliability; drain extended ... See more keywords
Assessing Negative-Capacitance Drain-Extended Technology for High-Voltage Switching and Analog Applications
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3044554
Abstract: In this article, we exploit the negative-capacitance (NC) property of ferroelectrics for high-voltage (HV) applications. We present rigorous analysis and new physical insights into the operation of the NC-based MOSFET with a ferroelectric layer in… read more here.
Keywords: switching analog; voltage; high voltage; negative capacitance ... See more keywords