Drain-Induced Multifunctional Ambipolar Electronics Based on Junctionless MoS2.
Sign Up to like & getrecommendations! Published in 2024 at "ACS nano"
DOI: 10.1021/acsnano.3c09876
Abstract: Applying a drain bias to a strongly gate-coupled semiconductor influences the carrier density of the channel. However, practical applications of this drain-bias-induced effect in the advancement of switching electronics have remained elusive due to the… read more here.
Keywords: drain induced; drain bias; induced multifunctional; multifunctional ambipolar ... See more keywords
Study of drain-induced channel effects in vertical GaN junction field-effect transistors
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad462a
Abstract: A normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) is demonstrated in this work. The device shows an on/off current ratio of 3.6 × 1010, a threshold voltage (V TH) of 1.64 V, and… read more here.
Keywords: channel effects; drain induced; gan junction; field effect ... See more keywords
The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
Sign Up to like & getrecommendations! Published in 2018 at "Technical Physics Letters"
DOI: 10.1134/s1063785018110020
Abstract: In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on… read more here.
Keywords: shape; buried oxide; thickness buried; effect ... See more keywords