The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
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DOI: 10.1134/s1063785018110020
Abstract: In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on… read more here.
Keywords: shape; buried oxide; thickness buried; effect ... See more keywords