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Published in 2019 at "Plasmonics"
DOI: 10.1007/s11468-019-00920-1
Abstract: A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included…
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Keywords:
graphene;
carrier;
source current;
drain source ... See more keywords
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Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00453-x
Abstract: This paper presents an efficient method to improve the heating effects in Nanoscale SOI MOSFET with the Vertical Gaussian Doping Profile in Drain and Source regions (D-S-G-SOI). Three different structures are investigated: uniform drain (C-SOI),…
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Keywords:
soi mosfet;
drain;
soi;
drain source ... See more keywords
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0
Published in 2020 at "Energies"
DOI: 10.3390/en13153802
Abstract: The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power…
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Keywords:
voltage;
high power;
power;
drain source ... See more keywords